Lorentz Center - Single dopant control from 29 Mar 2010 through 1 Apr 2010
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    Single dopant control
    from 29 Mar 2010 through 1 Apr 2010

 

DESCRIPTION AND AIM

 

 

Miniaturization of semiconductor devices has reached the point where the addition of a single dopant yields a large change in their performance. This led to the development of techniques that grant material control down to the scale of a single dopant in a semiconductor. Dopants can now be detected, placed in a controlled fashion, and their charge and spin degree of freedom be can manipulated on the single atom level. These breakthroughs allow for functionality on the single-atom level, which is the final frontier for nanoelectronics. Progress occurred in different sub-fields, utilizing different techniques to understand and manipulate dopant atoms and centers in different semiconductors. The workshop brings together renown experts in the different sub-fields such as single magnetic dopants in III/V and II/IV materials (STM & optics), single-atom functionality in top-down and bottom-up fabricated single donor devices in Si (STM & transport), and nitrogen-vacancy centers in diamond (optics & EPR).



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